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Link Between O2SiH Infrared Band Amplitude and Porous Silicon Photoluminescence During Ambient O3 Oxidation

Volume 66, Number 8 (Aug. 2012) Page 951-957

CALEY A. CARAS, JUSTIN M. REYNARD, RANDI E. DEURO, and FRANK V. BRIGHT*


We carefully evaluate how porous silicon (pSi) surface oxidation by ozone (O3) and the resulting changes in nanocrystallite surface chemistries (e.g., SiOSi, SiHx (x = 1–3), OySiH (y = 1–2), and SiOH) influence the pSi photoluminescence (PL). We discover a relationship between the pSi PL and the O2SiH band amplitude.



Index Headings: Porous silicon; Ozone; Photoluminescence; Infrared spectroscopy; Correlation.