The following is an abstract for the selected article. A PDF download of the full text of this article is available here. Members may download full texts at no charge. Non-members may be charged a small fee for certain articles.
Link Between O2SiH Infrared Band Amplitude and Porous Silicon Photoluminescence During Ambient O3 Oxidation
Volume 66, Number 8 (Aug. 2012) Page 951-957
CALEY A. CARAS, JUSTIN M. REYNARD, RANDI E. DEURO, and FRANK V. BRIGHT*
We carefully evaluate how porous silicon (pSi) surface oxidation by ozone (O3) and the resulting changes in nanocrystallite surface chemistries (e.g., SiOSi, SiHx (x = 1–3), OySiH (y = 1–2), and SiOH) influence the pSi photoluminescence (PL). We discover a relationship between the pSi PL and the O2SiH band amplitude.
Index Headings: Porous silicon; Ozone; Photoluminescence; Infrared spectroscopy; Correlation.