The following is an abstract for the selected article. A PDF download of the full text of this article is available here. Members may download full texts at no charge. Non-members may be charged a small fee for certain articles.
Carbon Measurement in Thin Silicon Wafers (400 m) by Infrared Absorption Spectrometry
Volume 36, Number 2 (April 1982) Page 153-155
An original method is developed to determine the carbon content in industrial samples (thin silicon wafers double-side polished) through IR spectrometry. This method permits to remove interference fringes in the infrared spectra by using the properties of Brewster incidence.