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Carbon Measurement in Thin Silicon Wafers (400 m) by Infrared Absorption Spectrometry

Volume 36, Number 2 (April 1982) Page 153-155

Leroueille, J.

An original method is developed to determine the carbon content in industrial samples (thin silicon wafers double-side polished) through IR spectrometry. This method permits to remove interference fringes in the infrared spectra by using the properties of Brewster incidence.