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Near-Infrared Raman Spectroscopy with a 783-nm Diode Laser and CCD Array Detector

Volume 43, Number 3 (April 1989) Page 372-375

Williamson, James M.; Bowling, Robert J.; McCreery, Richard L.

A GaAlAs diode laser operating at 783 nm was combined with an un-intensified charge coupled device (CCD) array detector and single grating spectrograph to obtain near-infrared (NIR) Raman spectra. The spectrometer has no moving parts and retains the high sensitivity expected for multichannel, shot-noise-limited detectors. Diode laser excitation permits high-sensitivity Raman spectroscopy with reduced fluorescence interference, in comparison to that produced with conventional visible lasers. The diode laser/CCD approach should exhibit much higher sensitivity than FT-Raman systems operating at 1064 nm, at much lower laser power. The sensitivity of the system was demonstrated by an S/N ratio of 17 for the 981-cm−1 band of 0.01 M (NH4)2SO4, obtained with 30 mW of 783 nm laser power.