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Thickness-Dependent Frequency Shift in Infrared Spectral Absorbance of Silicon Oxide Film on Silicon

Volume 44, Number 6 (July 1990) Page 970-974

Gunde, Marta Klanjšek; Aleksandrov, Boris


The spectral dependence of the refractive index n and extinction coefficient k of chemical-vapor-deposited (CVD) silicon oxide film on silicon wafer has been determined. The results are used to calculate spectral absorbances for 0.1-2 μm thick oxide films with unchanged structure. The dependence on thickness of the position of Si-O stretching (vM) has been investigated. The main factor influencing the frequency is the transmission factor at the air/film and film/substrate boundaries. In the limit of d → 0, vM corresponds to the maximum of the Im (ε) function.