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Spatial Mapping of Electroluminescence Due to Impact Ionization in High Electron Mobility Transistors
Volume 54, Number 10 (Oct. 2000) Page 1423-1428
Gaquiere, C.; Boudart, B.; Dhamelincourt, P.A.
For the first time to our knowledge, the use of a Raman microspectrometer is proposed for recording electroluminescence spectra as well as generating complete electroluminescence maps of areas selected on the surface of a pseudomorphic high electron mobility transistor (PHEMT). More particularly, this microspectrometer was used to investigate the impact ionization effect in different regions of the PHEMT located between gate and drain.