The following is an abstract for the selected article. A PDF download of the full text of this article is available here. Members may download full texts at no charge. Non-members may be charged a small fee for certain articles.

Spatial Mapping of Electroluminescence Due to Impact Ionization in High Electron Mobility Transistors

Volume 54, Number 10 (Oct. 2000) Page 1423-1428

Gaquiere, C.; Boudart, B.; Dhamelincourt, P.A.

For the first time to our knowledge, the use of a Raman microspectrometer is proposed for recording electroluminescence spectra as well as generating complete electroluminescence maps of areas selected on the surface of a pseudomorphic high electron mobility transistor (PHEMT). More particularly, this microspectrometer was used to investigate the impact ionization effect in different regions of the PHEMT located between gate and drain.