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Comparative Studies of Hydrogen Termination on SingleCrystal Silicon Surfaces by FT-IR and Contact-Angle Measurements

Volume 51, Number 12 (Dec. 1997) Page 1905-1909

Chyan, Oliver M.R.; Wu, Junjun; Chen, Jin-Jian

The hydrogen termination process on a Si(100) surface has been studied by multiple internal reflection infrared spectroscopy (MIRIS) and contact-angle measurements. Three main silicon hydride absorption peaks at 2087, 2104, and 2114 cm -1 were found to gradually increase with the hydrofluoric (HF) acid etching. Eventually, a constant peak height was reached as an indication of complete hydrogen termination. Integration of all the surface hydrides absorption peaks (2000 to 2200 cm -1) provides direct quantitative evaluation of the hydrogen termination process. On the other hand, water contact-angle data were shown to consistently lag behind the IR measurement in determining the extent of hydrogen termination on the silicon surface. Analysis of the surface free energy of HFetched silicon surfaces indicates that the degree of the hydrogen termination determined by water contact-angle measurements is subjected to inaccuracies due to the preferential hydrogen-bonding interaction between the water and silicon surface oxide.