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Room-Temperature Measurement of Photoluminescence Spectra of Semiconductors Using an FT-Raman Spectrophotometer

Volume 47, Number 11 (Nov. 1993) Page 1814-1819

Webb, J.D.; Dunlavy, D.J.; Ciszek, T.; Ahrenkiel, R.K.; Wanlass, M.W.; Noufi, R.; Vernon, S.M.


This paper demonstrates the utility of an FT-Raman accessory for an FT-IR spectrophotometer in obtaining the room-temperature photoluminescence (PL) spectra of semiconductors used in photovoltaic and electro-optical devices. Sample types analyzed by FT-IR/PL spectroscopy included bulk silicon and films of gallium indium arsenide phosphide (GaInAsP), copper indium diselenide (CuInSe2), and gallium arsenide-germanium alloy on various substrates. The FT-IR/PL technique exhibits advantages in speed, sensitivity, and freedom from stray light over conventional dispersive methods, and can be used in some cases to characterize complete semiconductor devices as well as component materials at room temperature. Some suggestions for improving the spectral range of the technique and removing instrumental spectral artifacts are presented.